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  sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com pk ( pd,pe ) 200hb thyristor module ul;e76102  m     . 5"# 5 ? nby nby       ,( ,(     . 3   unit  a symbol item conditions ratings 200 unit i t  av  ? average on-state current i t  rms  ? r.m.s. on-state current single phase, half wave, 180 ? conduction, tc  74 ? single phase, half wave, 180 ? conduction, tc  74 ? i tsm ? surge on-state current i 2 t ? i 2 t p gm peak gate power dissipation p g  av  average gate power dissipation i fgm peak gate current v fgm peak gate voltage  forward  1 ? 2 cycle, 50hz / 60hz, peak value, non-reqetitive value for one cycle of surge current a 310 a 5000 / 5500 a 125000 10 a 2 s w 3 v rgm peak gate voltage  reverse  di / dt critical rate of rise of on-state current i g 1 100ma | tj 1 25 ?| v d 1 1 ? 2 v drm | di g / dt 1 0.1a /  s v iso ? isolation breakdown voltage  r.m.s.  tj ? operating junction temperature tstg ? storage temperature mounting torque mass mounting  m5  terminal  m8  a.c. 1 minute recommended value 1.5-2.5  15-25  recommended value 8.8-10  90-105  typical value 3 w a 10 v 5 v 200 a /  s 2500 v  40 up 125 ?  40 up 125 2.7  28  11  115  510 ? n k<  f k b  g symbol item conditions ratings 50 unit i drm repetitive peak off-state current, max. i rrm ? repetitive peak reverse current, max. at v drm , single phase, half wave, tj 1 125 ? at v drm , single phase, half wave, tj 1 125 ? v tm ? peak on-state voltage, max. i gt / v gt gate trigger current / voltage, max. v gd non-trigger gate, voltage. min. tgt turn on time, max. dv / dt critical rate of rise of off-state voltage, min. i h holding current, typ. on-state current 750a, tj 1 125 ? inst. measurement tj 1 25 ?| i t 1 1a | v d 1 6v ma 50 ma 1.50 v 100 / 3 tj 1 125 ?| v d 1 1 ? 2 v drm i t 1 250a | i g 1 100ma | tj 1 25 ?| v d 1 1 ? 2 v drm | di g / dt 1 0.1a /  s 0.25 ma / v v 10 tj 1 125 ?| v d 1 2 ? 3 v drm | exponential wave. tj 1 25 ? i l lutching current, typ. rth  j-c  ? thermal impedance, max. tj 1 25 ? junction to case 500  s v /  s 50 ma 100 ma 0.18 ? / w  electrical characteristics  maximum ratings symbol item pk200hb120 pd200hb120 pe200hb120 ratings pk200hb160 pd200hb160 PE200HB160 unit v rrm ? repetitive peak reverse voltage 1200 1600 v 1300 1700 v 1200 1600 v v rsm v drm ? non-repetitive peak reverse voltage repetitive peak off-state voltage ? mark  thyristor and diode part. no mark  thyristor part power thyristor/diode module pk200hb series are designed for various rectifier circuits and power controls. for your circuit application. following internal connections and wide voltage ratings up to 1,600v are available. isolated mounting base ? i t  av  200a, i t  rms  310a, i tsm 5500a ? di / dt 200 a /  s ? dv / dt 500v /  s  applications  various rectifiers ac / dc motor drives heater controls light dimmers static switches internal configurations , ", ", ( , (    , ", ", ( ,    , ", ", , (    pk pd pe
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